Conference program ( PDF file )


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Nanostructure Optical Devices & Ultrafast Phenomena (9:45-12:00)

WeA-1 (invited) (9:45-10:15)
Recent advances in quantum dot lasers
M. Sugawara^1,2, Y. Arakawa³
(¹Fujitsu Labs Ltd, ²QD Laser, Inc., ³Univ. of Tokyo/Japan)

WeA-2 (10:15-10:30)
Near Room Temperature Polariton Electroluminescence in Strongly Coupled MC LED
P. Savvidis^1,2, S. Tsintzos¹, G. Konstantinidis², Z. Hatzopoulos¹, N. Pelekanos^1,2
(¹Univ. of Crete, ²FORTH/Greece)

WeA-3 (10:30-10:45)
Temporal Origin of THz Light Emission and the Phase of Bloch Oscillations in GaAs/AlAs Superlattices
T. Unuma^1,2, K. Hirakawa^1,3, Y. Ino¹, M. Kuwata-Gonokami¹
(¹Univ. of Tokyo, ²Nagoya Univ., ³CREST, JST/Japan)

WeA-4 (invited) (10:45-11:15)
Growth and optical properties of InAs/Sb:GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition for lasers application
D. Guimard, Y. Arakawa
(Univ. of Tokyo/Japan)

WeA-5 (11:15-11:30)
The effect of an electrostatic lateral potential on GaAs microcavity exciton-polaritons
N.-Y. Kim^1,2, G. Roumpos¹, C. Lai^1,2, S. Utsunomiya^2,3, N. Kumada³, T. Fujisawa³, A. Loeffler⁴, S. Hoefling⁴, A. Forchel⁴, Y. Yamamoto^1,2
(¹Stanford Univ./USA, ²Univ. of Tokyo, ³NTT/Japan, ⁴Univ. Würzburg/Germany)

WeA-6 (invited) (11:30-12:00)
Ultrafast Hydrogen Migration in Molecules in Intense Laser Fields
K. Yamanouchi
(Univ. of Tokyo/Japan)


Nitride Semiconductors (13:30-16:00)

WeB-1 (invited) (13:30-14:00)
Polarized emission from a single GaN/AlN quantum dot :Experiment and theory
B. Gil¹, T. Guillet¹, R. Bardoux¹, T. Bretagnon¹, P. Lefebvre¹, T. Taliercio¹, F. Semond²
(¹Univ. Montpellier 2, ²CRHEA - CNRS/France)

WeB-2 (14:00-14:15)
Theoretical study of electronic and optical properties of nitride nanopillars.
L. Prokopova, M. Povolotskyi, A. Di Carlo
(Univ. of Rome Tor Vergata/Italy)

WeB-3 (14:15-14:30)
Microscopic luminescence characterization of InGaN/GaN micro-disk LEDs on silicon: 3D stress distribution and optical confinement
A. Franke¹, F. Bertram¹, J. Christen¹, A. Dadgar^1,2, A. Krost^1,2, X.K. Lin³, S.L. Teo³, S. Tripathy³
(¹Otto-von-Guericke-Univ. Magdeburg, ²AZZURRO Semiconductor AG, Magdeburg/Germany, ³IMRE/Singapore)

WeB-4 (14:30-14:45)
Anisotropic stimulated emission and gain formation of non c plane InGa laser diodes
K. Kojima¹, M. Funato¹, Y. Kawakami¹, S. Nagahama², T. Mukai²
(¹Kyoto Univ., ²Nichia Corp./Japan)

WeB-5 (14:45-15:00)
Ultralow threshold electrically-pumped polariton laser
A. Di Carlo¹, D. Solnyshkov², E. Petrolati¹, G. Malpuech²
(¹Univ. of Rome Tor Vergata/Italy, ²Univ. Blaise Pascal/France)

WeB-6 (15:00-15:15)
Control of the Linear Polarization of Excitonic Emission from Group-III-nitride Quantum Dots
M. Winkelnkemper, A. Hoffmann, D. Bimberg
(Technical Univ. of Berlin/Germany)

WeB-7 (15:15-15:30)
Which Quasi-Particles in Wide Band Gap Bulk Microcavities?
S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, T. Taliercio, B. Gil
(Univ. Montpellier 2/France)

WeB-8 (15:30-15:45)
Optimization of electrical injection device for GaN based VCSELs and polariton lasers
E. Petrolati, A. Di Carlo
(Univ. of Rome Tor Vergata/Italy)

WeB-9 (15:45-16:00)
Temperature dependence of the recombination dynamics of free excitons and basal plane stacking faults emission in a-plane GaN ELO structures
B. Bastek¹, F. Bertram¹, J. Christen¹, T. Wernicke², M. Weyers², M. Kneissl³
(¹Univ. Magdeburg, ²Ferdinand-Braun-Inst. Berlin, ³TU Berlin and FBH Berlin/Germany)